Name

Symbol

Germanium

Silicon

Gallium Arsenide

Bandgap energy at 300 K

E_g (eV)

0.66

1.12

1.424

Breakdown Field

E_br (V/cm)

10⁵

3 x 10^{5 *}

4 x 10⁵

Density

(g/cm³)

5.33

2.33

5.32

Effective density of states in the conduction band at 300 K

N_c (cm^-3)

1.02 x 10¹⁹

2.82 x 10¹⁹

4.35 x 10¹⁷

Effective density of states in the valence band at 300 K

N_v (cm^-3)

5.65 x 10¹⁸

1.83 x 10¹⁹

7.57 x 10¹⁸

Intrinsic concentration at 300 K

n_i (cm^-3)

2.8 x 10¹³

1.0 x 10¹⁰

2.0 x 10⁶

Effective mass for density of states calculations

m_e^* / m₀

0.55

1.08

0.067

m_h^* / m₀

0.37

0.81

0.45

Electron affinity

χ (V)

4.0

4.05

4.07

Lattice constant

a (pm)

564.613

543.095

565.33

Mobility at 300 K (undoped)

μ_n (cm²/V-s)

3900

1400^†

8800

μ_p (cm²/V-s)

1900

450^†

400

Relative dielectric constant

ε_s/ ε₀

16

11.9

13.1

Thermal conductivity at 300 K

κ (W/cmK)

0.6

1.5

0.46

Refractive index at 632.8 nm wavelength

n

5.441

- i 0.785

3.875

- i 0.0181

3.856

- i 0.196