A.1 List of Symbols

B. Van Zeghbroeck

Appendix 1: Symbol Index by Name

Description

Symbol

MKS Units

- A -

Acceptor doping density

N_a

m^-3

Acceptor energy

E_a

Joule

Applied voltage

V_a

V

Area

A

m²

- B -

Barrier height	φ_B	V
Base doping density	N_B	m^-3
Base voltage	V_B	V
Base width	w_B	m
Body effect parameter	γ	V^1/2
Boltzmann's constant	k	J/K
Built-in potential of a p-n diode or Schottky diode	φ_i	V
Bulk potential	φ_F	V

- C -

Capacitance per unit area	C	F/m²
Charge	Q	C
Charge density per unit area at threshold in the depletion layer of an MOS structure	Q_d,T	C/m²
Charge density per unit area in the depletion layer of an MOS structure	Q_d	C/m²
Charge density per unit volume	ρ	C/m³
Charge density per unit volume in the oxide	ρ_ox	C/m³
Collector doping density	N_C	m^-3
Collector voltage	V_C	V
Collector width	w_C	m
Conduction band energy of a semiconductor	E_c	Joule
Conductivity	σ	Ω^-1m^-1
Current	I	A
Current density	J	A/m²
Current gain	β

- D -

Density of states in the conduction band per unit energy and per unit volume	g_c(E)	m^-3J^-1
Density of states in the valence band per unit energy and per unit volume	g_v(E)	m^-3J^-1
Depletion layer width	w	m
Depletion layer width in a p-type semiconductor	x_p	m
Depletion layer width in an MOS structure	x_d	m
Depletion layer width in an MOS structure at threshold	x_d,T	m
Depletion layer width in an n-type semiconductor	x_n	m
Dielectric constant of the oxide	ε_ox	F/m
Dielectric constant of the semiconductor	ε_s	F/m
Distribution function (probability density function)	f(E)
Donor doping density	N_d	m^-3
Donor energy	E_d	Joule
Doping density	N
Drain voltage	V_D	V

- E -

Effective density of states in the conduction band	N_c	m^-3
Effective density of states in the valence band	N_v	m^-3
Effective mass of electrons	m_e^*	kg
Effective mass of holes	m_h^*	kg
Electric field	E	V/m
Electron affinity of the semiconductor	χ	V
Electron current density	J_n	A/m²
Electron density	n	m^-3
Electron density in thermal equilibrium	n₀	m^-3
Electron density per unit energy and per unit volume	n(E)	m^-3
Electron diffusion constant	D_n	m²/s
Electron diffusion length	L_n	m
Electron energy in vacumm	E_vacuum	Joule
Electron generation rate	G_n	m^-3s^-1
Electron lifetime	τ_n	s
Electron mobility	μ_n	m²/V-s
Electron recombination rate	R_n	m^-3s^-1
electronic charge	q	C
Emitter doping density	N_E	m^-3
Emitter efficiency	γ_E
Emitter voltage	V_E	V
Emitter width	w_E	m
Energy	E	Joule
Energy bandgap of a semiconductor	E_g	Joule
Excess electron charge density in the base	ΔQ_n,B	C/m²
Excess electron density	δ_n	m^-3
Excess hole density	δ_p	m^-3

- F -

Fermi energy (thermal equilibrium)	E_F	Joule
Flatband capacitance per unit area of a MOS structure	C_FB	F/m²
Flatband voltage	V_FB	V
Free electron mass	m₀	kg

- G -

Gate voltage

V_G

- H -

Hole current density	J_p	A/m²
Hole density	p	m^-3
Hole density in an n-type semiconductor	p_n	m^-3
Hole density in thermal equilibrium	p₀	m^-3
Hole density per unit energy	p(E)	m^-3
Hole diffusion constant	D_p	m²/s
Hole diffusion length	L_p	m
Hole generation rate	G_p	m^-3s^-1
Hole lifetime	τ_p	s
Hole mobility	μ_p	m²/V-s
Hole recombination rate	R_p	m^-3s^-1

- I -

Interface charge density per unit area	Q_I	C/m²
Intrinsic carrier density	n_I	m^-3
Intrinsic carrier density	n_I	m^-3
Intrinsic Fermi energy	E_I	Joule
Ionized acceptor density	N_a^-	m^-3
Ionized donor density	N_d⁺	m^-3

- J -

Junction capacitance per unit area	C_j	F/m²
Junction depth	x_j	m

- K -

- L -

Length

- M -

Mass	m	kg
Mean free path	l	m

- N -

Net recombination rate of electrons	U_n	m^-3s^-1
Net recombination rate of holes	U_p	m^-3s^-1

- O -

Oxide capacitance per unit area	C_ox	F/m²
Oxide thickness	t_ox	m

- P -

Plank's constant	h	Js
Position	x	m
Potential	φ	V
Potential at the semiconductor surface	φ_s	V

- Q -

Quasi-Fermi energy of electrons	F_n	Joule
Quasi-Fermi energy of holes	F_p	Joule

- R -

Reduced Plank's constant (= h/2π)		Js
Resistance	R	Ω
Resistivity	ρ	Ωm

- S -

Speed of light in vacuum

m/s

- T -

Temperature	T	Kelvin
Thermal velocity	v_th	m/s
Thermal voltage	V_t	V
Thickness	t	m
Threshold voltage of an MOS structure	V_T	V
Transport factor	α

- U -

- V -

Valence band energy of a semiconductor	E_v	Joule
Velocity	v	m/s

- W -

Width of a p-type region	w_p	m
Width of an n-type region	w_n	m
Workfunction difference between the metal and the semiconductor	Φ_MS	V
Workfunction of the metal	Φ_M	V
Workfunction of the semiconductor	Φ_S	V

- X -

- Y -

- Z -

Introduction: The Semiconductor Industry
Chapter 1: Review of Modern Physics
Chapter 2: Semiconductor Fundamentals
Chapter 3: Metal-Semiconductor Junctions
Chapter 4: p-n Junctions

Title - Welcome - Contents - Help - Site Map

Chapter 5: Bipolar Junction Transistors
Chapter 6: MOS Capacitors
Chapter 7: MOSFETs

Appendices

FAQ - User Feedback