Example 6.1  

Calculate the flatband voltage of a silicon nMOS capacitor with a substrate doping N_a = 10¹⁷ cm^-3 and an aluminum gate (F_M = 4.1 V). Assume there is no fixed charge in the oxide or at the oxide-silicon interface.

Example 6.2  

Calculate the threshold voltage of a silicon nMOS capacitor with a substrate doping N_a = 10¹⁷ cm^-3, a 20 nm thick oxide (e_ox = 3.9 e₀) and an aluminum gate (F_M = 4.1 V). Assume there is no fixed charge in the oxide or at the oxide-silicon interface.

Example 6.3  

Calculate the oxide capacitance, the flatband capacitance and the high frequency capacitance in inversion of a silicon nMOS capacitor with a substrate doping N_a = 10¹⁷ cm^-3, a 20 nm thick oxide (e_ox = 3.9 e₀) and an aluminum gate (F_M = 4.1 V).