© B. Van Zeghbroeck 1994 - 2020    

   Menu   
B. Van Zeghbroeck                        
    
    
Chapter 3: Metal-Semiconductor Junctions

3.2 Structure and Principle of operation

3.1 Introduction

Metal-to-semiconductor (M-S) junctions are of great importance since they are present in every semiconductor device. They can behave either as a Schottky# barrier or as an ohmic contact dependent on the characteristics of the interface. We will primarily focus on Schottky barriers. This chapter contains an analysis of the electrostatics of the M-S junction, including the calculated of the charge, field and potential distribution within the device. This chapter also contains a derivation of the current voltage characteristics due to diffusion, thermionic emission and tunneling in Metal-Semiconductor junctions, followed by a discussion of M-S contacts and MESFETs.



#Named after Walter Schottky

Boulder, October 2007

 
Introduction: The Semiconductor Industry
Chapter 1: Review of Modern Physics
Chapter 2: Semiconductor Fundamentals
Chapter 3: Metal-Semiconductor Junctions
Chapter 4: p-n Junctions

Title - Welcome - Contents - Help - Site Map
Chapter 5: Bipolar Junction Transistors
Chapter 6: MOS Capacitors
Chapter 7: MOSFETs
 
Appendices

FAQ - User Feedback
Examples - Problems
Review Questions
Bibliography
Equation Sheet
Glossary

© B. Van Zeghbroeck 1994 - 2022