| Chapter 2 |
Name | Description |
An atom which is likely to take on one or more electrons when placed in a crystal | |
The range of energies between existing energy bands where no energy levels exist | |
The process of adding donors and acceptor to a crystal | |
Lowest empty or partially filled band in a semiconductor | |
The ratio of the current density to the applied electric field | |
Equation which states that the rate of change of a density of particles equals the net flux of particles coming in | |
A solid which consists of atoms placed in a periodic arrangment | |
Made of one or multiple crystals | |
The density of electronic states per unit energy and per unit volume | |
Motion of particles caused by thermal energy | |
Average distance minority carriers travel in a quasi-neutral region before they recombine | |
An atom which is likely to give off one or more electrons when placed in a crystal | |
Motion of carriers caused by an electric field | |
A collection of closely spaced energy levels | |
Process by which electron-hole pairs are generated | |
Particle associated with an empty electron level in an almost filled band | |
A foreign atom in a crystal | |
The density of electrons and holes in an intrinsic semiconductor | |
A semiconductors free of defects or impurities | |
The process of adding or removing an electron to/from an atom thereby creating a charged atom (i.e. ion) | |
The law which describes the relation between the densities of species involved in a chemical reaction | |
The ratio of the carrier velocity to the applied electric field | |
Process by which electron-hole pairs are removed | |
The ratio of the applied voltage to the current | |
Maximum velocity which can be obtained in a specific semiconductor | |
Highest filled or almost filled band in a semiconductor |