| Chapter 4 |
Name | Description |
p-n junction with a step function doping profile | |
Breakdown mechanism caused by impact ionization leading to avalanching due to carrier multiplication | |
Electric field at breakdown | |
Potential across a p-n diode in thermal equilibrium. | |
Charge per unit voltage | |
Width of the region close to the p-n junction without free carriers | |
Region close to the p-n junction without free carriers | |
Energy band diagram of a p-n diode containing no net charge | |
High current bias mode of a rectifying contact | |
A common approximation which simplifies the electrostatic analysis of semiconductor devices. Assumed is that the depletion region(s) is(are) fully depleted, with abrupt transitions to the adjacent quasi-neutral regions | |
High injection occurs by definition when, while forward biasing a p-n diode, the minority carrier density equals or exceeds the doping concentration in the semiconductor. See also High-Current Analysis. | |
p-n diode analysis based on recombination currents in the quasi-neutral regions | |
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p-n diode with an optical cavity, which emits coherent light when forward biased | |
p-n diode which emits light when forward biased | |
p-n diode with a long quasi-neutral region as compared to the minority carrier diffusion length in that region | |
Junction with a very large doping density on one side and a very low density of the other side. | |
A p-n junction which can be exposed to light, thereby yielding a photocurrent | |
A junction between an n-type and a p-type semiconductor | |
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Current due to recombination of carriers in the depletion region of a p-n diode | |
Current due to band-to-band recombination of carriers in the depletion region of a p-n diode | |
see Shockley-Hall-Read | |
Current due to Shockley-Hall-Read recombination of carriers in the depletion region of a p-n diode | |
Low current bias mode of a rectifying contact | |
p-n diode with a short quasi-neutral region as compared to the minority carrier diffusion length in that region | |
A p-n diode, which converts optical power into electrical power | |
Breakdown mechanism caused by tunneling of carriers through the energy bandgap |