| Chapter 7 |
Name | Description |
The variation of the threshold voltage of an FET due to a variation of the substrate or bulk voltage. See also Body Effect | |
Ion implantation in the channel region used to adjust the threshold voltage of a MOSFET. | |
Variation of the channel due to an increase of the depletion region when increasing the drain voltage. A reduction of the channel yields a higher current. | |
Complementary metal oxide silicon (transistor) | |
Transistor, which is normally on if the gate is connected to the source | |
Drain induced barrier lowering | |
Contact region of a MOSFET to which the electrons in the channel flow | |
Dynamic random access memory | |
Electrically alterable programmable read only memory | |
Erasable electrically programmable read only memory | |
Transistor, which is normally off if the gate is connected to the source. | |
Electrically programmable read only memory | |
Floating gate Avalanche injection Metal Oxide Silicon (transistor) | |
Field Effect Transistor | |
Electrode of an FET, which controls the charge in the channel | |
High current state of a CMOS circuit caused by the parasitic bipolar transistors | |
Low doped drain transistor structure | |
Local oxidation used to isolate two adjacent devices. | |
Metal-Oxide-Semiconductor Field Effect Transistor. See also MOSFET | |
Capacitance between the gate and the source/drain due to the overlap between the gate and the source/drain regions. | |
Breakdown mechanism caused by the overlap between the source and drain depletion regions | |
Random access memory | |
Contact region of a MOSFET from which the electrons in the channel originate | |
Transistor current when biased below threshold | |
The gate-source voltage at which a transistor starts to conduct. | |
A MOSFET model which includes the variable depletion layer width between the inversion layer and the substrate | |
Doped region of opposite doping type used in a CMOS process |